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Two-bit per I/O line write data bus for DDR1 and DDR2 operating modes in a DRAM

机译:用于DRAM中DDR1和DDR2操作模式的每I / O线两位数据写入总线

摘要

A data bus circuit for an integrated circuit memory includes a 4-bit bus per I/O pad that is used to connect the memory with an I/O block, but only two bits per I/O are utilized for writing. Four bits per I/O pad are used for reading. At every falling edge of an input data strobe, the last two bits are transmitted over the bus, which eliminates the need for the precise counting of input data strobe pulses. The data bus circuit is compatible with both DDR1 and DDR2 operating modes.
机译:用于集成电路存储器的数据总线电路包括用于每个I / O焊盘的4位总线,该总线用于将存储器与I / O模块连接,但是每个I / O仅两位用于写入。每个I / O焊盘四位用于读取。在输入数据选通脉冲的每个下降沿,最后两位通过总线传输,从而无需对输入数据选通脉冲进行精确计数。数据总线电路与DDR1和DDR2工作模式兼容。

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