首页>
外国专利>
Shielded gate field effect transistor with improved inter-poly dielectric
Shielded gate field effect transistor with improved inter-poly dielectric
展开▼
机译:具有改进的多晶硅间电介质的屏蔽栅场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A field effect transistor (FET) includes a trench extending into a silicon region of a first conductive type. A shield insulated from the silicon region by a shield dielectric extends in a lower portion of the trench. A gate electrode is in the trench over but insulated from the shield electrode by an inter-poly dielectric (IPD). The IPD comprises a conformal layer of dielectric and a thermal oxide layer.
展开▼