首页> 外国专利> Masks each having a central main pattern region and a peripheral phantom pattern region with light-transmitting features in both pattern regions having the shame shape and pitch and methods of manufacturing the same

Masks each having a central main pattern region and a peripheral phantom pattern region with light-transmitting features in both pattern regions having the shame shape and pitch and methods of manufacturing the same

机译:每个都具有中央主图案区域和外围幻影图案区域的掩模,在两个具有阴影形状和间距的图案区域中均具有透光特征,及其制造方法

摘要

A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.
机译:掩模和形成掩模的方法消除了光学邻近效应。掩模包括在透明基板上的遮光层。对遮光层进行构图以形成主图案和幻像图案。主图案和幻像图案分别具有遮光部和透光部。构成幻影图案的特征的间距与构成主图案的特征的间距相同。幻像图案区域的透光特征的形状与主图案区域的透光特征的形状相同。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号