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Masks each having a central main pattern region and a peripheral phantom pattern region with light-transmitting features in both pattern regions having the shame shape and pitch and methods of manufacturing the same
Masks each having a central main pattern region and a peripheral phantom pattern region with light-transmitting features in both pattern regions having the shame shape and pitch and methods of manufacturing the same
A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.
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