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Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition
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机译:通过在Teos衬里沉积之前或之后执行的氮注入程序来改善热载流子寿命的方法
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摘要
A process for fabricating input/output, N channel, (I/O NMOS) devices, featuring an ion implanted nitrogen region, used to reduce hot carrier electron, (HEC), injection, has been developed. The process features implanting a nitorgen region, at the interface of an overlying silicon oxide layer, and an underlying lightly doped source/drain, (LDD), region. The implantation procedure can either be performed prior to, or after, the deposition of a silicon oxide liner layer, in both cases resulting in a desired nitrogen pile-up at the oxide-LDD interface, as well as resulting, in a more graded LDD profile. An increase in the time to fail, in regards to HCE injection, for these I/O NMOS devices, is realized, when compared to counterparts fabricated without the nitrogen implantation procedure.
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机译:已经开发出一种制造输入/输出N沟道(I / O NMOS)器件的方法,该器件具有离子注入的氮区域,用于减少热载流子电子(HEC)的注入。该工艺的特征在于,在上覆的氧化硅层的界面处,注入一个nitorgen区域,以及下覆的轻掺杂源/漏(LDD)区域。可以在沉积氧化硅衬里层之前或之后执行注入程序,在两种情况下都会导致在氧化物-LDD界面处产生所需的氮堆积,并导致更渐变的LDD个人资料。与不使用氮注入程序制造的同类产品相比,这些I / O NMOS器件在HCE注入方面的故障时间增加了。
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