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A METHOD OF FABRICATING SILICON ON AN INSULATOR REGION ON A SILICON SUBSTRATE AND A SILICON ON INSULATOR SUBSTRATE
A METHOD OF FABRICATING SILICON ON AN INSULATOR REGION ON A SILICON SUBSTRATE AND A SILICON ON INSULATOR SUBSTRATE
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机译:在硅衬底上的绝缘子区域上制造硅的方法以及在硅衬底上的绝缘子上制造硅的方法
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摘要
forming a first dielectric region in a silicon substrate by etching, deposition, and chemical-mechanical polishing; forming a single crystal layer on the substrate by polysilicon deposition and re-growth or epitaxial growth; removing portions of the single crystal layer to produce silicon islands that are fully on the first dielectric region; and filling in the spaces between the silicon islands with a second dielectric, by deposition and chemical-mechanical-polish, that overlaps peripheral portions of the first dielectric. Additional steps subdivide the fully isolated silicon on insulator regions by etching trenches in the islands and backfilling with a third dielectric, by deposition and chemical-mechanical-polish.
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