PHASE-CHANGE FILM FOR SEMICONDUCTOR NON-VOLATILE MEMORY AND SPUTTERING TARGET FOR FORMING SUCH PHASE-CHANGE FILM

摘要

ABSTRACT PHASE-CHANGE FILM FOR SEMICONDUCTOR NON-VOLATILE MEMORY AND SPUTTERING TARGET FOR FORMING SUCH PHASE-CHANGE FILM There are provided a phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film. The phase change film for a semiconductor nonvolatile memory and the sputtering target for forming the phase change film have a composition containing 10 to 25 atomic% of Ge, 10 to 25 atomic% of Sb, 1 to 10 atomic% of Ga, and 10 atomic % or less of B, A1, C, Si and lanthanoid elements, with the balance being Te and inevitable impurities.No Figure for publication