METHOD FOR UTILIZING HEAVILY DOPED SILICON FEEDSTOCK TO PRODUCE SUBSTRATES FOR PHOTOVOLTAIC APPLICATIONS BY DOPANT COMPENSATION DURING CRYSTAL GROWTH

摘要

A method for using relatively low-cost silicon with low metal impurity concentration by adding a measured amount of dopant and or dopants before and/or during silicon crystal growth so as to nearly balance, or compensate, the p-type and n-type dopants in the crystal, thereby controlling the net doping concentration within an acceptable range for manufacturing high efficiency solar cells.