METHOD AND APPARATUS FOR IMPROVING INTEGRATE CIRCUIT DEVICE PERFORMANCE USING HYDRID CRYSTAL ORIENTATIONS

摘要

A method for implementing a desired offset in device characteristics of an integrated circuit includes forming a first device of a first conductivity type (Nl ) on a first portion of a substrate (1 10) having a first crystal lattice orientation, and forming a second device of the first conductivity type (N2) on a second portion of the substrate (100) having a second crystal lattice orientation. The carrier mobility of the first device (Nl ) formed on the first crystal lattice orientation (1 1 0) is greater than the carrier mobility of the second device (N2) formed on the second crystal lattice orientation (100).