Memory device, in particular phase change random access memory, with nanowire transistor and method for fabricating the memory device

摘要

The invention relates to a memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory ("PCRAM"), with a transistor. Further, the invention relates to a method for fabricating a memory device. According to an aspect of the invention, a memory device is provided, comprising at least one nanowire or nanotube or nanofibre access transistor (4). Preferably, the nanowire or nanotube or nanofibre access transistor directly contacts an active switching material (2) of the memory device. According to an additional aspect, a memory device comprises at least one access transistor with a vertically arranged Si nanowire (40).