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NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION
NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION
A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises: (a) an organosilane polymer prepared by reacting polycondensation products of hydrolysates of compounds represented by Formulae 1, 2 and 3: [RO]3Si-Ar (1) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group), [RO]3Si-H (2) (wherein R is methyl or ethyl), and [RO]3 Si-R' (3) (wherein R is methyl or ethyl and R'is substituted or unsubstituted cyclic or acyclic alkyl) with ethyl vinyl ether of Formula 4: CH2 CHOCH2 CH3 (4) in the presence of an acid catalyst; (b) a solvent; and (c) a crosslinking catalyst.
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