HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM INCLUDING ORGANOSILANE POLYMER AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a hardmask composition for a resist underlayer film that has high etching selectivity, sufficient resistance to multiple etchings, and an antireflective property to minimize the reflectivity between the resist and a lower layer, and a method of patterning a backside material layer on a substrate using the hardmask composition.;SOLUTION: The hardmask composition for a resist underlayer film is provided from one kind or more of compounds represented by a formula (1): [R₁O]₃Si-R₂ (wherein R₁ represents an alkyl group with a carbon number of 1 to 5, an acetoxy group, or an oxime group, while R₂ represents hydrogen, the alkyl group with a carbon number of 1 to 5, an aryl group, or an aralkyl group), and contains an organosilane polymer with a value of molecular weight distribution (Mw/Mn) of 1.1 to 2, and a solvent.;COPYRIGHT: (C)2008,JPO&INPIT