INTEGRATED SEMICONDUCTOR AND TRANSITION-METAL OXIDE NANOSTRUCTURES AND METHODS FOR PREPARING SAME

摘要

This invention encompasses methods for the preparation of a series of nanostructures and nanostructured devices, as well as the devices prepared by this method. The innovation pertains to methods of materials synthesis for producing bottom-up nanostructures with integration of technologically important semiconductor materials (Si, SiGe, Ge, GaAs, GaN, CdSe and other group IV, III- V and II- VI) with a class of technologically important functional oxide materials known as transition metal oxides. The methods benefit from being inexpensive, robust, and controllable in terms of component composition, hierarchal design flexibility, and component thicknesses. The nanostructures produced by these methods have the added benefit of their transferability to other non-traditional substrates and/or platforms. The devices enabled by this method include semiconductor nanostructures that are enhanced by transition metal oxide components for non-volatile memories, nanoscale magnetoresistive spintronic devices, transistors, transducers, and single-molecule detectors. The bottom-up nanotechnology and scales approaching one-dimensional behavior translate to reduced fabrication cost and increased device performance.