NANO IMPRINT BLANKMASK, NANO IMPRINT STAMP AND ITS MANUFACTURING METHOD

摘要

A nano-imprint blank mask, a nano-imprint stamp, and a manufacturing method of the same are provided to enhance quality of a semiconductor device by improving performance thereof. A nano-imprint blank mask for nano-imprint lithography is formed by laminating a nano-imprint layer and a resist layer on a transparent substrate(10). The nano-imprint blank mask is characterized in that a grain size of the nano-imprint layer is equal to or less than 500nm. The nano-imprint blank mask is characterized in that the thickness of the nano-imprint layer is 10-700 angstrom, the transmittance of the nano-imprint layer is less than 1 percent with respect to an ultraviolet curing wavelength, and the amount of phase shift to the ultraviolet curing wavelength is equal to and less than 180 degrees.