首页> 外国专利> CIRCUIT FOR AMPLIFICATION DEGREE AND NOISES DEGREE IMPROVING MOSFET AND FREQUENCY MIXER, AMPLIFIER AND OSCILLATOR USING THEREOF

CIRCUIT FOR AMPLIFICATION DEGREE AND NOISES DEGREE IMPROVING MOSFET AND FREQUENCY MIXER, AMPLIFIER AND OSCILLATOR USING THEREOF

机译:用于放大度和噪声度的电路,由此改善了MOSFET和频率混合器,放大器和振荡器

摘要

A circuit for improving amplification and noise of a MOSFET(MOS field effect transistor) and a frequency mixer, an amplifier and an oscillator using the same are provided to improve amplification and a noise characteristic by using the body effect of the MOSFET. A circuit for improving amplification and noise of a MOSFET includes a capacitor, and a current source. The capacitor connects a gate terminal and a body terminal of the MOSFET. The current source is connected with the gate terminal and the body terminal of the MOSFET to improve the amplification and the noise of the MOSFET so as to supply signals simultaneously. The MOSFET is a P-type MOSFET or an N-type MOSFET.
机译:提供一种用于改善MOSFET(MOS场效应晶体管)的放大和噪声的电路以及使用该电路的混频器,放大器和振荡器,以通过利用MOSFET的体效应来改善放大和噪声特性。用于改善MOSFET的放大和噪声的电路包括电容器和电流源。电容器连接MOSFET的栅极端子和体端子。电流源与MOSFET的栅极端子和体端子相连,以改善MOSFET的放大和噪声,从而同时提供信号。 MOSFET是P型MOSFET或N型MOSFET。

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