BACK ILLUMINATED CMOS IMAGE SENSORS WITH DEEP TRENCH ISOLATION AND METHOD FOR PRODUCING THE SAME

摘要

A back illuminated CMOS image sensor having a deep trench device isolating film and a method for producing the same are provided to prevent an electrical crosstalk and an optical crosstalk between pixels by isolating a photo diode of a pixel array using a device isolating film with a deep trench structure. A back illuminated CMOS image sensor comprises a device isolating film with a deep trench structure(13), a photo diode(11), a pixel circuit(20), and a lens(30). The device isolating film with the deep trench structure is formed by extending from a first side to a second side of a semiconductor substrate(10). The photo diode is defined by the device isolating film with the deep trench structure, and is formed by extending from a first side to a second side of the semiconductor substrate. The pixel circuit adjacent to the first side of the semiconductor substrate is formed. The lens adjacent to the second side of the semiconductor substrate is formed.