HIGH ETCH RESISTANT HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTY WITH IMPROVEMENT OF CARBON CONTENTS AND PROCESS OF PRODUCING PATTERNED MATERIALS BY USING THE SAME

摘要

A copolymer containing an aromatic ring, an antireflective hard mask composition containing the copolymer, and a method for preparing a material shape patterned on a substrate by using the composition are provided to minimize the reflection between a resist and a back layer and to improve etching selectivity. A copolymer containing any one aromatic ring represented by the formula 1, 2 or 3, wherein 1=m=750; 1=n=750; R1 is -CH2-, -CH2-Ph-CH2-, -CH2-Ph-Ph-CH2- or -CH(-OH-substituted Ph)- or -CH(-Ph)-; R2 is -O- or -CnH2nO- of C1-C7; and R3 to R7 are independently H, a hydroxyl group, a C1-C10 alkyl group, a C6-C10 aryl group, an allyl group or a halogen atom. An antireflective hard mask composition comprises the copolymer containing an aromatic ring; an initiator; and an organic solvent.