TEST PATTERN FOR ESTIMATING THE CHARACTERISTIC OF GATE DIELECTRIC LAYER AND METHOD FOR ESTIMATING THE CHARACTERISTIC OF GATE DIELECTRIC LAYER USING THE SAME

摘要

One test chart, its characteristic for being used to evaluate a gate insulating layer and a kind of method are arranged to improve the reliability of characteristic and device to include the semiconductor substrate with a single casing programme for evaluating the characteristic using identical gate insulating layer by using test chart. One test chart, for evaluating a gate insulating layer in a recess gate structure, with semi-conductive substrate (100), it has the slot (H) for one and one single casing programme, one gate insulating layer (102), it is being used for one, on the slot of a grid conducting shell (104) and one (106). Semiconductor substrate function is as a first electrode, when gate function is as a second electrode. When a voltage is applied to semiconductor substrate and door, it is not generated from a current flowing in a drain region a to source region, so that gate insulating layer is evaluated, the effect in none interface. The assessment of gate insulating layer is performed in a well accumulation mode.