THE METHOD FOR BEVEL ETCH OF WAFER EDGE USING BEOL PROCESS

摘要

A bevel etching method of a wafer edge for a BEOL(Back-End-Of-Line) process is provided to completely remove foreign materials residing on the wafer edge and to improve yield by using gas containing SF6, CF4, and O2. Positions of a lower electrode(3) and an upper electrode are set in a position setting procedure. A wafer(1) is received on the lower electrode. The upper electrode has an insulator(4). Plasma(P) is formed at an edge of the wafer and the edge is etched in a bevel etching procedure. The bevel etching adopts gas for generating the plasma. The gas contains SF6, CF4, and O2. A supply amount of O2 is 20 to 30 sccm. RF(Radio Frequency) power of 600 to 800W is supplied in the bevel etching in order to form the plasma at the upper electrode and the lower electrode.