Infrared sensor device, method for manufacturing the same and Infrared sensor package

摘要

An infrared sensing device is provided to reduce a fabricating cost and reduce a device size by fabricating an infrared sensing device by a simple MEMS process. A substrate(100) is prepared which has a through hole(110). An insulation layer(120) is formed on the substrate wherein a partial region of the insulation layer is floating over the through hole. A pair of electrode lines(131,132) are separated from each other in an insulation layer region corresponding to the upper part of the through hole, extended to the insulation layer region on the substrate. An infrared sensing layer(140) is formed in the insulation layer region on the through hole, partially surrounding the pair of separated electrode lines. An infrared filter(180) is attached to the lower part of the substrate. The through hole can have a shape that is reduced in width as it goes from the lower part of the substrate to the upper part of the substrate, having an inclined inner wall.