MANUFACTURING METHOD OF SILICON ON INSULATOR IN SHALLOW TRENCH ISOLATION REGION AND STRUCTURE THEREOF

摘要

A method for forming an SOI(silicon on insulator) in a shallow trench isolation region is provided to improve a leakage current characteristic by forming an SOI structure in a shallow trench isolation region. An active region(10) and a field region are divided by an STI(shallow trench isolation) method. The inside of the field region is patterned to be 60-80 percent of the depth of the field region so as to divide an SOI region. An epitaxial silicon layer(30) is formed in the SOI region to grow a single crystal silicon. The epitaxial silicon layer formed in the residual portion except the SOI region is eliminated by a CMP process.