SEMICONDUCTOR MEMORY DEVICE HAVING A DIFFERENT TIME POINT OF INITIALIZATION FOR ROW PATH AND COLUMN PATH, AND METHOD OF INITIALIZING THE SAME

摘要

A semiconductor memory device having different time point of initialization for a row path and a column path, and a method of initializing the same are provided to have short setup time of an internal power supply voltage during power-up, by having different initialization time for the row path and the column path. A row path is initialized in response to a power-up signal, and generates a word line enable signal by decoding a row address signal, and provides the word line enable signal to a memory cell array(1600). A reset signal generation circuit(1300) generates a column reset signal by delaying the power-up signal. A column path is initialized in response to the column reset signal, and generates a column selection signal by decoding a column address signal, and provides the column selection signal to a memory cell array.