Redundancy circuit for semiconductor memory device - provides defined connection paths between main and auxiliary row and column selection lines

摘要

The redundancy circuit is provided for each memory block of the memory device, allowing the main row and column selection lines to be coupled to auxiliary row and column selection lines, for repairing defective bits. Each main row or column selection line with a member of adjacnet auxiliary row and column selection lines via defined connection paths, so that the selection lines for a deflective bit are left out. USE - Simple repair of defective data bits.