首页> 外国专利> METHOD FOR TESTING INTERNAL HIGH VOLTAGE IN NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND VOLTAGE OUTPUTTING CIRCUIT THEREFOR

METHOD FOR TESTING INTERNAL HIGH VOLTAGE IN NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND VOLTAGE OUTPUTTING CIRCUIT THEREFOR

机译:在非挥发性半导体存储器中测试内部高压的方法及其电压输出电路

摘要

A method for testing an internal high voltage in a non-volatile semiconductor memory device and a voltage outputting circuit thereof are provided to test a voltage outputted from a voltage generator more accurately as reducing test time of the voltage. A high voltage generator(100) generates an internal voltage following to a predetermined target voltage level. A sampling pulse generation part(200) generates a sampling pulse in order to obtain the internal high voltage outputted from the high voltage generator variously according to selection output modes. A sample and hold circuit(300) samples the internal high voltage outputted from the high voltage generator in response to the sampling pulse of the sampling pulse generation part, and holds the internal high voltage during fixed time period.
机译:提供一种用于测试非易失性半导体存储装置中的内部高压的方法及其电压输出电路,以随着减少电压的测试时间而更准确地测试从电压发生器输出的电压。高压发生器(100)产生跟随预定目标电压电平的内部电压。采样脉冲产生部分(200)产生采样脉冲,以便根据选择输出模式以各种方式获得从高压发生器输出的内部高压。采样和保持电路(300)响应于采样脉冲产生部分的采样脉冲而采样从高压发生器输出的内部高压,并在固定时间段内保持内部高压。

著录项

  • 公开/公告号KR100827700B1

    专利类型

  • 公开/公告日2008-05-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20070005035

  • 发明设计人 KIM CHAE HOON;KIM DAE HAN;

    申请日2007-01-17

  • 分类号G11C16/30;G11C16/32;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:10

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