IMPROVED METAL BARRIER BEHAVIOR BY SiC:H DEPOSITION ON POROUS MATERIALS

摘要

The present invention is applicable to the sealing between the porous dielectric layer 2 and the metal diffusion barrier layer (7) relates to a dielectric layer (1) . The dielectric layer is sealed to close the pores on the surface and the side wall of the porous dielectric layer . Through the present invention , the thin metal diffusion barrier layer without forming pinholes in the metal diffusion barrier layer can be used . The sealed insulating layer is Si _x C _y : H _{The z} of the CVD deposited film with composition.