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Antireflective Film Material, and Antireflective Film and Pattern Formation Method Using the Same
Antireflective Film Material, and Antireflective Film and Pattern Formation Method Using the Same
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机译:防反射膜材料,以及使用该材料的防反射膜和图案形成方法
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摘要
It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.
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