Phase change memory device having increased contact area between lower electrode contact layer and phase change layer and method of manufacturing the same

摘要

The phase change memory device and a manufacturing having a large contact area between the lower electrode contact layer and the phase change layer method is disclosed on. The phase change memory element of the present invention comprises a switching device coupled to the storage node and the lower electrode contact layer comprises a lower electrode contact layer, a phase change layer and the upper electrode layer filled in the via hole where the lower electrode contacts the cheungneun provides a phase change memory device and a manufacturing method which is characterized by having a projection protruding phase-change layer. The projections with a low etching rate etching condition of the lower electrode contact layer may be formed in the interlayer insulating layer at the circumference by dry or wet etching, can be formed by selective growth method, be formed using a deposition and photo etching process may. The selective growth method, a deposition and photo may be further subjected to the dry or wet etching after the etching process.