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DIAMOND SUBSTRATE FOR SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE

机译:用于表面声波装置的金刚石基质和用于表面声波装置的金刚石

摘要

PURPOSE: A diamond substrate for a surface acoustic wave device and the surface acoustic wave device are provided to be capable of increasing the propagation speed of surface acoustic wave and reducing propagation loss. CONSTITUTION: A surface acoustic wave device(100) is provided with a diamond substrate(200), a piezoelectric thin film(120) formed at the upper portion of the diamond substrate, and a plurality of comb type electrodes(140,160) formed at the predetermined upper portions of the resultant structure. At this time, the diamond substrate is made of a silicon wafer(220) and a diamond thin film(240). Preferably, a center layer is formed between the diamond substrate and the piezoelectric thin film. Preferably, the diamond thin film is formed by carrying out one selected from a group consisting of a CVD(Chemical Vapor Deposition) process, a heat filament CVD process, a microwave plasma CVD process, a high frequency plasma CVD process, and DC(Direct Current) plasma jet process.
机译:目的:提供一种用于表面声波装置的金刚石基板和表面声波装置,其能够提高表面声波的传播速度并减少传播损耗。构成:一种声表面波装置(100),其具有金刚石基板(200),形成在所述金刚石基板的上部的压电薄膜(120),以及在所述金刚石基板的上部形成的多个梳型电极(140,160)。所得结构的预定的上部。此时,金刚石基板由硅晶片(220)和金刚石薄膜(240)制成。优选地,在金刚石基板和压电薄膜之间形成中心层。优选地,通过执行选自由以下组成的组中的一种来形成金刚石薄膜:CVD(化学气相沉积)工艺,热丝CVD工艺,微波等离子体CVD工艺,高频等离子体CVD工艺和DC(直接当前)等离子流工艺。

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