A method for preparing an organic thin film transistor, organic thin film transistor and organic light emitting display device

摘要

A method for fabricating an organic thin film transistor is provided to effectively form a precise pattern by forming an organic semiconductor layer and/or a second insulation layer by an inkjet printing method. A gate electrode is formed on a substrate(600). A gate insulation layer(770) is formed to cover the gate electrode. A source/drain electrode(710) are formed on the gate insulation layer. A first insulation layer(790) is formed to cover the source electrode and the drain electrode. A first surface treatment is performed on the surface of the first insulation layer to make the first insulation layer have a hydrophobic surface. An opening is formed which exposes the mutually confronting portion of the source electrode and the drain electrode among the firstly-treated first insulation layer. An organic semiconductor layer(730) and a second insulation layer(732) are formed in the opening. A second surface treatment is performed to make the first and second insulation layers have hydrophilic surfaces. At least one of the organic semiconductor layer and the second insulation layer can be formed by an inkjet printing method.