A nonvolatile semiconductor - memory cell, nonvolatile semiconductor memory - component and a method for producing a non-volatile semiconductor memory - component

摘要

A nonvolatile semiconductor - memory cell, comprising:– a semiconductor substrate (31) of the first conductivity type;– a common source region (32a) of the second conductivity type in a first direction within the substrate (31);– a first drain region (32b) and a second drain region (32b) of the second conductivity type in the first direction in the substrate (31) with a fixed distance from both sides of the common source region (32a);– an insulating film (38a, 39) on the substrate (31);– an insulating strip (40b) on said insulating film (38a, 39) both via the common source region (32a) as well as at one side of the common source region (32a), the second drain region (32b) lying closest to; a conductive potential unsaturated collar a gate (35a, 35b) over said insulating film (38a, 39) and the insulating strips (40b),– a dielectric film (36) on the exposed surfaces of the floating gates (35a, 35b), and– a conductive control gate (37) in a second direction on the dielectric..