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A method for the determination of correction values for the adjustment of a semiconductor wafer into a projection apparatus for the photolithographic structuring of a metal layer

机译:一种确定校正值的方法,该校正值用于将半导体晶片调节到用于金属层的光刻结构的投影设备中

摘要

A method for the determination of correction values for the adjustment of a semiconductor wafer into a projection apparatus for the photolithographic structuring of a metal layer, comprising the steps of:– Providing a semiconductor wafer (10);– Providing the upper side of the semiconductor wafer (10) with a multiple arrangement of circuit structures (25), which in each case in the edge region of an exposure field (20) adjusting marks (27, 28) have;– Mounting of at least two covering surfaces (33) over the upper side of the semiconductor wafer (10), so that at least two alignment marks (27) of the two covering surfaces (33) are covered;– Providing a sputtering system comprises a metallic target;– Depositing a metal layer (35) on the upper side of the semiconductor wafer (10) in the sputter system;– Providing a model, which is suitable for the in the case of the metal deposition of the sputter installation errors caused by means of rotation with the metal layer (35) to provide adjustment marks (28) is covered;– Determining the position difference of protected alignment marks (27), which, during the depositing of the metal layer (35) of one of the..
机译:一种用于确定校正值的方法,该校正值用于将半导体晶片调整为用于金属层的光刻结构的投影设备,该方法包括以下步骤:–提供半导体晶片(10); –提供半导体的上侧具有电路结构(25)的多重布置的晶片(10),在每种情况下,在曝光区域(20)的边缘区域中,调节标记(27、28)具有; –安装至少两个覆盖表面(33)覆盖半导体晶片(10)的上侧,以便覆盖两个覆盖表面(33)的至少两个对准标记(27);-提供包含金属靶的溅射系统;-沉积金属层(35 )在溅射系统中半导体晶片(10)的上侧; –提供一个模型,该模型适用于因金属层(35)的旋转而引起的溅射沉积在金属中的安装错误。 )提供调整标记(28)被覆盖; –确定受保护的对准标记(27)的位置差,在沉积其中之一的金属层(35)期间。

著录项

  • 公开/公告号DE10342776B4

    专利类型

  • 公开/公告日2008-09-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2003142776

  • 发明设计人

    申请日2003-09-16

  • 分类号H01L21/66;H01L23/544;H01L21/8242;G03F9/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:50:06

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