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A method for the determination of correction values for the adjustment of a semiconductor wafer into a projection apparatus for the photolithographic structuring of a metal layer
A method for the determination of correction values for the adjustment of a semiconductor wafer into a projection apparatus for the photolithographic structuring of a metal layer
A method for the determination of correction values for the adjustment of a semiconductor wafer into a projection apparatus for the photolithographic structuring of a metal layer, comprising the steps of:– Providing a semiconductor wafer (10);– Providing the upper side of the semiconductor wafer (10) with a multiple arrangement of circuit structures (25), which in each case in the edge region of an exposure field (20) adjusting marks (27, 28) have;– Mounting of at least two covering surfaces (33) over the upper side of the semiconductor wafer (10), so that at least two alignment marks (27) of the two covering surfaces (33) are covered;– Providing a sputtering system comprises a metallic target;– Depositing a metal layer (35) on the upper side of the semiconductor wafer (10) in the sputter system;– Providing a model, which is suitable for the in the case of the metal deposition of the sputter installation errors caused by means of rotation with the metal layer (35) to provide adjustment marks (28) is covered;– Determining the position difference of protected alignment marks (27), which, during the depositing of the metal layer (35) of one of the..
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