A method for the production of an integrated memory device with a buried bit lines and an integrated memory device with a buried bit lines

摘要

A method for the production of an integrated memory device (100), wherein said method comprising the steps of:a) depositing a first dielectric layer (2) on a substrate (1), which has a substrate surface (1a),b) depositing a first gate - conductor layer (6), as a result of which a first layer stack (9) is formed, which at least the first dielectric layer (2) and the first gate - conductor layer (6) comprises,c) patterning of the first layer stack (9), as a result of which a plurality of structured conductor tracks (10) is created, which along a first direction (x) parallel to the substrate surface (1a) and extend along a second direction (y), the of the first direction (x) is different, by means of elongated intermediate spaces (15) are separated from each other,d) forming a plurality of bit lines (20),e) forming an insulating layer (21), which covers the bit lines (20),f) depositing a second layer stack (29) andg) patterning of the second layer stack (29), as a result of which a plurality of word lines (30) is formed along the..