Semiconductor component for producing integrated circuits and transistors with deformed channel area, has crystalline semiconductor area, gate electrode, which is formed in crystalline semiconductor area with channel area

摘要

The semiconductor component (100) has crystalline semiconductor area, gate electrode (152), which is formed in crystalline semiconductor area, with a channel area. The channel area is defined in a longitudinal direction and a breadth direction. The gate electrode has a biaxial tensile bracing, which causes a biaxial tensile distortion in the channel area along the longitudinal direction and breadth direction channels. The former gate electrode has an area made of polysilicate, and another area made of silicon or germanium. A shaped semiconductor material has shaped silicon or carbon material. An independent claim is also included for a method provided for a recess in a gate electrode of a transistor.