Power sensor`s reference potential adjusting method for metal oxide semiconductor power semiconductor device, involves predetermining several tapping points on surface of power semiconductor device

摘要

The method involves predetermining several tapping points on a surface of a power semiconductor device. A power flow between the tapping points and a measuring point for measurement of a potential average value are determined and realized based on a specific geometry of the semiconductor device. Each potential value at the tapping point is detected and delivered to the measuring point, and an average potential value at the measuring point is determined, where a potential of a power sensor is adjusted to the average potential value. An independent claim is also included for an arrangement for the determination of a source potential of a metal oxide semiconductor (MOS) power semiconductor device.