首页> 外国专利> Power semiconductor component with potential probe, the power semiconductor device with a power semiconductor component having a potential probe and method for operating a power semiconductor component with a potential probe

Power semiconductor component with potential probe, the power semiconductor device with a power semiconductor component having a potential probe and method for operating a power semiconductor component with a potential probe

机译:具有电势探针的功率半导体部件,具有电势探针的功率半导体部件的功率半导体器件以及用于操作具有电势探针的功率半导体部件的方法

摘要

The present invention relates to a power semiconductor component having a semiconductor body (1) and two load terminals (21, 22). Furthermore, a potential probe (3) is provided, which is designed for this purpose, in the case of a between the two load terminals (21, 22) applied electrical voltage (v1 - v2) to a abgreifort (4) of the semiconductor body (1) an existing electrical selecting (vz) of the semiconductor body (1) to pick off the between the electrical potentials (v1, v2) of the two load connections (21, 22), which may, however, be of any one of the electrical potentials (v1, v2) of the two load connections (21, 22), a distinction.
机译:功率半导体组件技术领域本发明涉及一种功率半导体组件,其具有半导体本体(1)和两个负载端子(21、22)。此外,提供电势探针(3),该电势探针为此目的而设计,在两个负载端子(21、22)之间将电压(v1-v2)施加到半导体的电阻(4)时主体(1)的半导体主体(1)的现有电气选择(v z ),以拾取两个负载连接(21、22)的电势(v1,v2)之间的电位,然而,这可以是两个负载连接(21、22)的电位(v1,v2)中的任何一个,这是有区别的。

著录项

  • 公开/公告号DE102009028049B3

    专利类型

  • 公开/公告日2011-02-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20091028049

  • 发明设计人

    申请日2009-07-28

  • 分类号H01L29/423;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:52

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