Integrated circuit e.g. conductive bridging RAM device, has voltage control unit that is coupled to programmable resistance cell and regulates voltage existing at programmable resistance cell to target voltage

摘要

The circuit has a programmable resistance cell (30) e.g. resistive memory cell, which is switchable between a high resistance condition and a low resistance condition. A voltage control unit (20) is coupled to the programmable resistance cell and regulates the voltage existing at the programmable resistance cell to a target voltage. The voltage control unit increases the voltage existing at the resistance cell when the resistance cell is in low resistance condition. An independent claim is also included for a method for determining resistance condition of a programmable resistance cell.