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Semiconductor component has metal layer comprising coherent section, and other metal layer is arranged on coherent section of former metal layer, where latter metal layer is structured between layered regions
Semiconductor component has metal layer comprising coherent section, and other metal layer is arranged on coherent section of former metal layer, where latter metal layer is structured between layered regions
The component has a metal layer (1) comprising a coherent section. The other metal layer (2) is arranged on the coherent section of the former metal layer. The latter metal is harder than the former metal. The latter metal layer is structured between two layered regions (2a,2b) arranged on the coherent section of the former metal layer. The latter metal comprises boron or phosphorous containing metal and boron or phosphorous containing metal alloy. Independent claims are also included for the following: (1) a contact element comprising a layer pile with a continuous sub-area of a metallization layer of a semiconductor component (2) a method for producing a semiconductor component.
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