Testing method for material layer in semiconductor structure on integrity for producing integrated circuit, involves producing semiconductor structure of structural element containing material, and layer that contains another material

摘要

The method involves producing a semiconductor structure (200) of a structural element containing a material, and a layer that contains another material is formed over the structural element. The semiconductor structure is exposed at an etchant. The structural component of the etchant is corroded or is not examined after exposure of the semiconductor structure at the etchant. The former material contains a metal and metal copper. The latter material has a titanium, tantalum, titanium nitride and tantalum nitride. The etchant has an ammonium peroxydisulphate and iron (III) chloride.