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Device and memory device, method for producing structures in a workpiece and method for producing a memory device

机译:装置和存储装置,用于在工件中制造结构的方法以及用于制造存储装置的方法

摘要

One method of fabricating structures in a workpiece includes providing a region of a cap layer over a predetermined region of the workpiece, providing a resist layer over the workpiece and the cap layer, and forming resist patterns in the resist layer. The workpiece is patterned using the patterned resist layer and the cap layer as an etch mask. Another method of fabricating structures in a workpiece includes providing a resist layer over the workpiece and forming resist patterns in the resist layer. The workpiece is patterned using the patterned resist layer as an etch mask and obtaining workpiece structures. The workpiece structures are removed from a predetermined area of the workpiece. After that, a pitch fragmentation process is executed.
机译:在工件中制造结构的一种方法包括:在工件的预定区域上方提供覆盖层的区域;在工件和覆盖层上方提供抗蚀剂层;以及在抗蚀剂层中形成抗蚀剂图案。使用图案化的抗蚀剂层和覆盖层作为蚀刻掩模来图案化工件。在工件中制造结构的另一种方法包括在工件上提供抗蚀剂层并在抗蚀剂层中形成抗蚀剂图案。使用图案化的抗蚀剂层作为蚀刻掩模来图案化工件并获得工件结构。从工件的预定区域去除工件结构。之后,执行音高分割处理。

著录项

  • 公开/公告号DE102007008934A1

    专利类型

  • 公开/公告日2008-08-28

    原文格式PDF

  • 申请/专利权人 QIMONDA AG;

    申请/专利号DE20071008934

  • 发明设计人

    申请日2007-02-23

  • 分类号H01L21/768;H01L21/8229;H01L23/52;H01L27/10;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:21

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