首页> 外国专利> Arrangement for producing solder bumps on semiconductor substrates with generation of electrical charge, method and arrangement for removing these charges, and electrical charge-generating semiconductor substrate

Arrangement for producing solder bumps on semiconductor substrates with generation of electrical charge, method and arrangement for removing these charges, and electrical charge-generating semiconductor substrate

机译:通过产生电荷在半导体衬底上产生焊料凸块的装置,去除这些电荷的方法和装置以及产生电荷的半导体衬底

摘要

The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself. IMAGE
机译:本发明提供一种可以防止电荷外观半导体衬底(201、202)热电击穿和物理故障的凸块形成设备(101、501),由该凸块形成设备执行的用于去除电荷出现半导体衬底的电荷的方法,用于电荷外观半导体衬底的电荷去除单元和电荷外观半导体衬底。至少在凸点键合到晶片之后冷却晶片时,通过与后形成的凸点加热装置(170)直接接触而去除由于冷却而积聚在晶片(202)上的电荷,或者去除电荷。通过降低温度控制,可以在非接触状态下去除电荷。因此,与传统技术相比,可以减少晶片的电荷量,从而防止晶片热电击穿和对晶片本身的破坏,例如破裂等。 <图像>

著录项

  • 公开/公告号DE60037251T2

    专利类型

  • 公开/公告日2008-10-09

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD.;

    申请/专利号DE2000637251T

  • 发明设计人

    申请日2000-06-29

  • 分类号H01L21/60;H01L41/22;H01L21;

  • 国家 DE

  • 入库时间 2022-08-21 19:48:34

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