首页> 外国专利> Fast programming method for non-volatile memory, in particular a flash memory and similar memory architectures

Fast programming method for non-volatile memory, in particular a flash memory and similar memory architectures

机译:用于非易失性存储器,特别是闪存和类似存储器架构的快速编程方法

摘要

The programming method includes the following steps: sequentially receiving (23, 27) a plurality of data words; temporarily storing (24, 29) each data word after its reception; and simultaneously writing (31, 35) in parallel the plurality of stored data words in a memory array. After reception and temporary storage of each data word, the memory increments (25) an address counter and sends a "ready" signal (26). Upon reception of each new data word (27), the memory verifies whether the address associated thereto is in the same sector as the initial data word (28) and whether n data words have already been stored (30). If the sector is different, blind-programming step is terminated (35, 36) and the verifying is carried out (37); if the sector is the same but n data words have already been stored temporarily, the memory writes the temporarily stored words in the memory array (31), updates the address counter (25), and then sends the "ready" signal (26).
机译:该编程方法包括以下步骤:顺序地接收(23、27)多个数据字;以及接收到每个数据字后,临时存储(24、29);同时并行地将多个存储的数据字写入(31、35)到存储器阵列中。在接收并暂时存储每个数据字之后,存储器将地址计数器递增(25),并发送“就绪”信号(26)。在接收到每个新的数据字(27)之后,存储器验证与之相关的地址是否与初始数据字(28)在相同的扇区中,以及是否已经存储了n个数据字(30)。如果扇区不同,则终止盲编程步骤(35、36),并进行验证(37);如果扇区相同,但是已经临时存储了n个数据字,则存储器将临时存储的字写入存储阵列(31),更新地址计数器(25),然后发送“就绪”信号(26) 。

著录项

  • 公开/公告号DE60130774T2

    专利类型

  • 公开/公告日2008-07-17

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2001630774T

  • 发明设计人

    申请日2001-10-25

  • 分类号G11C16/10;

  • 国家 DE

  • 入库时间 2022-08-21 19:48:28

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