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Fast programming method for non-volatile memory, in particular a flash memory and similar memory architectures
Fast programming method for non-volatile memory, in particular a flash memory and similar memory architectures
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机译:用于非易失性存储器,特别是闪存和类似存储器架构的快速编程方法
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摘要
The programming method includes the following steps: sequentially receiving (23, 27) a plurality of data words; temporarily storing (24, 29) each data word after its reception; and simultaneously writing (31, 35) in parallel the plurality of stored data words in a memory array. After reception and temporary storage of each data word, the memory increments (25) an address counter and sends a "ready" signal (26). Upon reception of each new data word (27), the memory verifies whether the address associated thereto is in the same sector as the initial data word (28) and whether n data words have already been stored (30). If the sector is different, blind-programming step is terminated (35, 36) and the verifying is carried out (37); if the sector is the same but n data words have already been stored temporarily, the memory writes the temporarily stored words in the memory array (31), updates the address counter (25), and then sends the "ready" signal (26).
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