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Surface passivation to reduce the dark current in a CMOS image sensor
Surface passivation to reduce the dark current in a CMOS image sensor
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机译:表面钝化可减少CMOS图像传感器中的暗电流
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摘要
A method for reducing dark current in a photodiode is disclosed. The photodiode comprises a N-well formed in a P-substrate. The method comprises doping the surface of said N-well with a nitrogen dopant. Alternatively, an oxygen or silicon dopant may be used. Still alternatively, a silicon oxynitride layer may be formed over the N-well IMAGE
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