首页> 外国专利> Cvd - applying fruorcarbonpolymer - thin films

Cvd - applying fruorcarbonpolymer - thin films

机译:VCD-应用氟碳聚合物-薄膜

摘要

Provided are methods for forming a fluorocarbon polymer thin film on the surface of a structure. In one method, a monomer gas is exposed to a source of heat having a temperature sufficient to pyrolyze the monomer gas and produce a source of reactive CF.sub.2 species in the vicinity of the structure surface. The structure surface is maintained substantially at a temperature lower than that of the heat source to induce deposition and polymerization of the CF.sub.2 species on the structure surface. In another method for forming a fluorocarbon polymer thin film, the structure is exposed to a plasma environment in which a monomer gas is ionized to produce reactive CF.sub.2 species. The plasma environment is produced by application to the monomer gas of plasma excitation power characterized by an excitation duty cycle having alternating intervals in which excitation power is applied and in which no excitation power is applied to the monomer gas. The monomer gas employed in the methods preferably includes hexafluoropropylene oxide. The monomer gas pyrolysis and plasma excitation methods can be carried out individually, sequentially, or simultaneously. Flexible fluorocarbon polymer thin films can thusly be produced on wires, twisted wires, neural probes, tubing, complex microstructures, substrates, microfabricated circuits, and other structures. The thin films have a compositional CF. sub.2 fraction of at least about 50%, a dielectric constant of less than about 1.95, and a crosslinking density of less than about 35%.
机译:提供了在结构的表面上形成碳氟化合物聚合物薄膜的方法。在一种方法中,将单体气体暴露于热源,该热源具有足以热解单体气体并在结构表面附近产生反应性CF 2物质的源。结构表面基本上保持在低于热源的温度下,以引起CF 2物质在结构表面上的沉积和聚合。在形成碳氟化合物聚合物薄膜的另一种方法中,将结构暴露于等离子体环境中,在该等离子体环境中将单体气体离子化以产生反应性CF 2物质。通过向等离子体气体施加等离子体激发功率来产生等离子体环境,该等离子体环境的特征在于,激发占空比具有交替的间隔,在该间隔中,施加激发功率,并且不对单体气体施加激发功率。该方法中使用的单体气体优选包括六氟环氧丙烷。单体气体热解和等离子体激发方法可以单独,顺序或同时进行。因此,可以在电线,双绞线,神经探针,管道,复杂的微结构,基板,微制造的电路和其他结构上生产柔性碳氟化合物聚合物薄膜。薄膜具有组成CF。 sub.2分数至少约50%,介电常数小于约1.95,交联密度小于约35%。

著录项

  • 公开/公告号DE69738218T2

    专利类型

  • 公开/公告日2008-07-24

    原文格式PDF

  • 申请/专利权人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;

    申请/专利号DE1997638218T

  • 发明设计人

    申请日1997-05-05

  • 分类号C23C16/00;C23C16/44;C23C16/50;C08F14/18;

  • 国家 DE

  • 入库时间 2022-08-21 19:47:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号