LOCKED PHOTODIODE HAVING HIGH STORAGE CAPABILITY, FOR EXAMPLE FOR AN IMAGE SENSOR, ASSOCIATED IMPLEMENTATION METHOD, AND IMAGE SENSOR COMPRISING SUCH A DIODE.

摘要

A photodiode formed of a region of a first type (210) within a region of a second type (220) of a semiconductor substrate. The region of the first type comprises a first zone (212) comprising a dopant of the first type at a first concentration (C1) and having a first depth (P1). According to the invention, the region of the first type (210) also comprises a second zone (214) adjacent to the first zone (212), comprising the dopant of the first type at a second concentration (C2) greater than the first concentration (C1 ) and having a second depth (P2) smaller than the first depth (P1) .The invention also relates to a method for producing such a diode.Application to the production of image sensors.