PLASMA SURFACE TREATMENT FOR SILICON AND METAL NANOCRYSTAL NUCLEATION

摘要

PROBLEM TO BE SOLVED: To provide a device such as a nonvolatile memory device and a method for forming the device in an integrated process tool.;SOLUTION: The method includes: a step of depositing a tunnel oxide layer on a substrate; and a step of forming a plasma-altered near surface by exposing a tunnel oxide layer to a plasma and consequently allowing the plasma to alter the morphology of the surface and the near surface of the tunnel oxide. After that, nanocrystals are deposited on the altered near surface of the tunnel oxide.;COPYRIGHT: (C)2009,JPO&INPIT