EARLY WRITE WITH DATA MASKING TECHNIQUE FOR INTEGRATED CIRCUIT DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICES AND THOSE INCORPORATING EMBEDDED DRAM

摘要

PROBLEM TO BE SOLVED: To provide data early write with a data masking technique for dynamic random access memory (DRAM) devices and those incorporating embedded DRAM.;SOLUTION: A complementary data line, a complementary bit line, and a memory cell connected to the complementary bit line are provided. During early writing for achieving a high speed writing operation in the memory cell, the complementary data line pair is kept at an intermediate potential when data masking is carried out. Thus, early writes to DRAM arrays with direct bit, byte or word data masking capability are enabled.;COPYRIGHT: (C)2009,JPO&INPIT