Being device simulation manner of the polycrystal semiconductor devices, design manner of the polycrystal semiconductor devices and device simulation manner of the polycrystal

摘要

PROBLEM TO BE SOLVED: To obtain a polycrystalline semiconductor element of an optimized structure in a semiconductor element using a polycrystalline semiconductor as an active layer.;SOLUTION: In a polycrystalline silicon thin film transistor whose carrier transport mechanism at a grain boundary is dominant over transistor characteristics, the flow density of carriers that pass through the grain boundary in the active layer is calculated considering scattering effects of free carriers in the grain boundary, and on the basis of the result, a parameter which is dominant over device characteristics is determined. Preferably, Thermionic Emission effects are taken into consideration.;COPYRIGHT: (C)2003,JPO