Ridge waveguide type semiconductor laser

摘要

PROBLEM TO BE SOLVED: To provide a ridge waveguide type semiconductor laser to provide a new laser element structure for preventing laser characteristic abnormality or the deterioration of life characteristics caused in mounting.;SOLUTION: This ridge waveguide type semiconductor laser is provided with a ridge part 14a for forming a waveguide formed in a p side semiconductor layer 14, an insulating protecting film 17 covering the p side semiconductor layer 14 so that at least a part of the ridge part top face can be exposed, a p side ohmic electrode 15 brought into contact with the ridge part exposed from that and a p side pad electrode 19 formed so as to be electrically brought into contact with the p side ohmic electrode. A diffusion preventing layer 30 for preventing the diffusion of low melting metal is formed between the p side ohmic electrode and the p side pad electrode, and at least the ridge part 14a exposed from the insulating protecting film 17 is covered with the diffusion preventing layer. Thus, the diffusion of the low melting point metal from a conductive joining agent for mounting to the ridge part can be suppressed by the diffusion preventing layer, and the ohmic contact between the p side ohmic electrode and the p type nitride semiconductor layer can be satisfactorily maintained.;COPYRIGHT: (C)2005,JPO&NCIPI