RIDGE TYPE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING RIDGE TYPE SEMICONDUCTOR LASER

摘要

PPROBLEM TO BE SOLVED: To provide a ridge type semiconductor laser so constituted as to improve the reproducibility of diffraction grating formation during a production process, and to prevent the deterioration of the crystal quality of an etching stopper layer, and a method for manufacturing the ridge type semiconductor laser. PSOLUTION: The ridge type semiconductor laser 301 has a carrier stopper layer 16 of the compound AlInAs, a clad layer 17 of the compound AlGaInAs, and an etching stopper layer 18 of the compound InGaAsP laminated in sequence at one side of an active layer 14 of the compound AlGaInAs, and has a ridge waveguide 40 containing a diffraction grating 20' formed in the layer of the compound InP by using the compound InGaAsP at a side opposite to the clad layer 17 side of the etching stopper layer 18. PCOPYRIGHT: (C)2011,JPO&INPIT