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Production method of high purity Al membrane formation material, production device of high purity Al membrane formation material, high purity Al membrane formation material, and Al membrane

机译:高纯度Al膜形成材料的制造方法,高纯度Al膜形成材料的制造装置,高纯度Al膜形成材料和Al膜

摘要

PROBLEM TO BE SOLVED: To provide an oxygen (O) content-reduced Al compound expressed by H3Al:Lk [in the general formula, k is 1 or 2, and L is organic amine].;SOLUTION: In the production device, the raw material of an Al compound expressed by the general formula of H3Al:Lk [wherein, k is 1 or 2, and L is organic amine] is allowed to react to produce an Al compound expressed by the general formula of H3Al:Lk. The production device is provided with: a reaction apparatus in a synthetic reaction stage; a solid matter removal apparatus in a solid matter removal stage after the synthetic reaction stage; and a distillation apparatus in a distillation stage after the synthetic reaction stage. The parts in contact with the Al compound expressed by the general formula H3Al:Lk in the reaction apparatus, the solid matter removal apparatus and the distillation apparatus are made of metal. Also, the coupling part between the reaction apparatus and the solid matter removal apparatus and the coupling part between the solid matter removal apparatus and the distillation apparatus are provided with metallic packing.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供由H 3 Al:L k 表示的降低氧(O)含量的Al化合物[在通式中,k为1或2 ;解决方案:在生产装置中,用H 3 Al:L k 通式表示的Al化合物的原料[式中,k为1或2,L为有机胺]反应生成通式为H 3 Al:L k 的Al化合物。该生产装置具备:合成反应阶段的反应装置;和在合成反应阶段之后的固体物质去除阶段中的固体物质去除设备;在合成反应阶段之后的蒸馏阶段中的蒸馏设备。在反应装置,固形物去除装置和蒸馏装置中,与通式H 3 Al:L k 表示的Al化合物接触的部分由以下材料制成:金属。另外,在反应装置与固体物质去除装置之间的结合部以及在固体物质去除装置与蒸馏装置之间的结合部设置有金属填料。COPYRIGHT:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP4247823B2

    专利类型

  • 公开/公告日2009-04-02

    原文格式PDF

  • 申请/专利权人 株式会社トリケミカル研究所;

    申请/专利号JP20030122621

  • 发明设计人 町田 英明;益 一哉;

    申请日2003-04-25

  • 分类号C23C16/12;C07F5/06;C01F7/00;

  • 国家 JP

  • 入库时间 2022-08-21 19:38:00

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