In introducing the 1st process which carries at a time

摘要

PROBLEM TO BE SOLVED: To repeatedly form a thin copper film in a stable manner without deteriorating the film thickness and film quality and to enhance throughput by depositing a thin copper film on a substrate in a reaction chamber using an organometallic complex of copper, taking out the substrate and introducing oxygen into the reaction chamber.;SOLUTION: A substrate is carried in a reaction chamber, a starting material based on a β-diketone complex of copper or the like is introduced into the chamber in a gaseous phase and a thin metal copper film is deposited on the substrate by CVD. After film formation, the substrate is taken out of the chamber. Oxygen is then introduced into the chamber. This oxygen is preferably diluted to 0.1-10% with other gas such as an inert gas before the introduction. The deposition of metal copper on a substrate is repeated to successively form thin metal copper films. Oxygen may be introduced after completely finishing the taking-out of the substrate after film formation or after film formation is repeated prescribed times or at the time when film thickness becomes the minimum thickness by the repetition.;COPYRIGHT: (C)2000,JPO